New FPGA deign using Dopant-Segregated Schottky Transistor (DSS-MOSFET) and nonvolatile configuration memory (NCM) has been presented. Both of these devices can be fabricated by mature process for mass production. DSS-MOSFET can improve pass-transistor logics in FPGA effectively. Since NCM is fabricated in interconnect layers, it is possible to reduce the circuit area. Furthermore, nonvolatility can reduce the power consumption by cutting off the static power of unused logic blocks. These effects on FPGA performance have been confirmed by SPICE simulations, designing physical layout and benchmarking of FPGA, indicating 26 % improvement in critical path delay, and 15 % improvement in area delay products.